The analytical survey of materials on the uniformity of measurements assurance and on the surface relief and roughness characteristics in micro- and nanometer ranges is carried out. The significant distinctions in topographic and profile estimations of probability characteristics of surface relief parameters were revealed. The comparison of the number of measurements necessary for achieving the given accuracy with the credibility value of microphotographic and profile parameters is carried out.

The analysis of review materials and international normative-methodical documents devoted to methods of the areal (zone) characterization of topography and textures of rough surface. The issues of application of special filters for elimination of undesirable transverse components of the measurement surface are considered. The modern standardized approach to separation of roughness and waviness components on the primary (basic) surface is shown.

The process of topology features characterization involving five stages (steps) is considered. The tree of changes representing the relationships between the contour lines on the surface is shown. The statistical processing of signs of significant topological parameters reduced to plotting of histogram of quantitative values (or number) of signs is given.

The ample opportunities of fractal methods for discrimination of the profiles measured on various surfaces and at construction of functional models of interactions with surfaces are shown. The areal-scale analysis is carried out at the study of adhesion processes: the thermal spray of adhesive coating, bacterial adhesion and carbonization.

The problem of methodical provision of a surface quality control, measurement of its roughness, a form and mutual disposition of surfaces required at various stages of microelectronics products manufacturing are considered. The specific features of measuring problems solved by scanning probe microscopy and high resolution 3D interferometry methods and instruments are analysed. The structural peculiarities of characterization of atomically clean and real surfaces are also considered.