The method of identification of parameters, particularly of impuls transition functions, of the line systems with distributed parameters is offered.

We present the results of the study of the effect of contamination in a S-4800 SEM on the profiles of relief elements on silicon surface. It is shown, that the 20 keV electron irradiation leads to the modification of the profiles of the relief elements. Dependences of the profile parameters on the electron irradiation dose are presented for different irradiation modes.

Automated interference microscope MIA-D, developed by All-Russian Research Institute of Optical and Physical Measurements (VNIIOFI) is presented. The microscope is designed to measure the height of the surface profile of reflecting dynamic objects in the micro-and nanoscale, the dynamic processes in living cells.

On the basis of results of known model researches of spectral dependence of reflection of radiation with cirrus clouds the limiting achievable accuracy of measurements of total water vapor content in atmosphere carried out with Sun photometers is studied. It is shown, that upon presence of cirrus clouds the maximal possible value of signal-noise ratio in sun photometric measurements of total content of water vapors minimal reachable value of error of measurements, equal to 0,04 – 0,05.

Paper describes one of aspects of the testing of power MOS transistors. There is effect of parasitic undesirable turn-on MOSFET associated with rate of rise drain-source voltage when device switching-off. This parasitic undesirable turn-on may cause catastrophic failure transistor using it in pulse mode with inductive load. In the article identified mechanisms of parasitic undesirable turn-on MOSFET and suggested methodology of testing transistors in the presence of this effect on example of VNB35N07.